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3R3M4V6 MAX6860 S0720920 HC1G86 C1500 0805B10 7662ER HC1G86
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  Datasheet File OCR Text:
 SHINDENGEN
General Purpose Rectifiers
SMT Bridges
S1WB(A)60
600V 1A
FEATURES *oe Small SMT *oe High IFSM *oe Applicable to Automatic Insertion APPLICATION power supply *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation
*oe Switching
OUTLINE DIMENSIONS
Case : 1W1W Case : Unit : mm
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 600 V Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25*Z IO 1 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*ZA 30 Current Squared Time I2 t 1ms*...t*10ms*@Tj=25*Z 4.5 A2s *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF IF =0.5A, Pulse measurement, Rating of per diode ax.1.0 V M R RM Reverse Current IR V =V , Pulse measurement, Rating of per diode Max.10 EA Thermal Resistance AEjl junction to lead Max.10 *Z/W AEja junction to ambient Max.65
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
S1WB(A)x
10
Forward Voltage
Forward Current IF [A]
Tl=150C [TYP] 1
Tl=25C [TYP]
Pulse measurement per diode
0.1 0.4
0.6
0.8
1
1.2
1.4
Forward Voltage VF [V]
S1WB(A)x
3.5
Forward Power Dissipation
Forward Power Dissipation PF [W]
3
2.5
2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Average Rectified Forward Current IO [A]
Tj = 150C Sine wave
S1WB(A)x
1.2
Derating Curve
PCB
Average Rectified Forward Current IO [A]
1
SIN Glass-epoxy substrate Soldering land 3mm
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
Sine wave R-load Free in air
S1WB(A)x
50
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
40
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25C before surge current is applied
30
20
10
0
1
2
5
10
20
50
100
Number of Cycles [cycles]


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